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Laboratoire de Physique de la Matière Condensée


Alistair Rowe

CNRS Faculty, Ecole Polytechnique

Alistair Rowe

ph: +33 (0)1 69 33 47 87
fax: +33 (0)1 69 33 47 99
...and a very short bio...

Our research is primarily focused on electronic and spin transport phenomena in semiconductors or at semiconductor surfaces and interfaces. Currently we have two projects that have been or are currently nationally funded, the first being a study of spin polarized tunneling between an optically pumped GaAs tip and a metallic ferromagnetic surface, and the second involving a study of novel piezoresistive effects in semiconductor nanostructures.

In the first of these two projects, also involving Daniel Paget, we have recently shown, for the first time, that the tunnel current between an optically pumped GaAs tip and a ferromagnetic surface depends on the relative tip/surface polarizations. While this result has eluded a number of previous efforts, its experimental verification may open up a number of possibilities in, for example, spin polarized scanning tunneling microscopy (SPSTM). To date, we have elucidated the tunneling mechanisms for non-polarized photoelectrons and worked on the growth under equilibrium conditions of GaAs tips with our collaborators in Clermont-Ferrand. The project also involves collaborators in Clermont-Ferrand (E.Gil) and at IEMN, Lille (S. Arscott, E. Peytavit), where novel III-V semiconductor MEMS supports for the tips are fabricated.

The second of the two projects involves a topic that is currently hotly debated; giant piezoresistance in silicon nanowires. We work closely with both Steve Arscott (IEMN Lille, France) and Christoph Renner (University of Geneva, Switzerland) with whom we are currently investigating the properties of bottom-up grown silicon nanowires under mechanical stress.