Contact : Catherine Henry de Villeneuve
Participants : Catherine Henry de Villeneuve, François Ozanam
ISFETs (Ion Sensitive Field Effect Transistors) are electronic devices for the electrical detection of ionic species in solution. The principle of these chemical sensors is based on macroscopic measurement of potential variations resulting from a change in the device’s surface charge state. Recent works have demonstrated exceptional performance in terms of selectivity and sensitivity (attomolar detection limit) in the case of devices integrating - as a dielectric and sensitive layer - a lipid monolayer tethered with ionic probes (Fig. 1). [1,2]
Our activities focus on the fabrication of organic monolayers with controlled architectures to study the influence of structural properties at the molecular level on the electrical response measured in the devices.
Figure 1 : (a, b) Schematic description of an ISFET device integrating a monolayer of lipids functionalized by ionic probes on the surface of a semiconductor material. (c) Device sensibility : potential variations (∆Vthreshold) measured as a function of the Cs+ ion content in seawater. [2]
Funding : ANR (projet ANR-24-CE09-0367-03 "AMPLI").
Collaboration : CINaM (PIV, IMMF)
Thesis : Volkan Kilinc (2020, Université Aix Marseille)
Publications :
[1] Novel and innovative interface as potential active layer in Chem-FET sensor devices for the specific sensing of Cs+, V. Kilinc, C. Henry-de-Villeneuve, T. P. Nguy, Y. Wakayama, A. Charrier, J.-M. Raimundo ; ACS Applied Materials & Interfaces (2019).
[2] Affinity driven ion exchange EG-OFET sensor for high selectivity and low limit of detection of Cesium in seawater, T. P. Nuy, V. Kilinc, R. Hayakawa, C. Henry-de-Villeneuve, J.-M. Raimundo, Y. Wakayama, A. Charrier ; Sensors & Actuators B : Chemical (2022) 351, 130956.