2013
Effect of Pauli Blockade on Spin-Dependent Diffusion in a Degenerate Electron Gas,
F. Cadiz, D. Paget and A. C. H. Rowe,
Physical Review Letters 111, 246601 (2013)
http://dx.doi.org/10.1103/PhysRevLett.111.246601
Surface recombination in doped semiconductors: Effect of light excitation power and of surface passivation,
F. Cadiz, D. Paget, A. C. H. Rowe, V. L. Berkovits, V. P. Ulin, S. Arscott and E. Peytavit,
Journal of Applied Physics 114, 103711 (2013)
http://dx.doi.org/10.1063/1.4821139
Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop,
J. Iveland, L. Martinelli, J. Peretti, J. S. Speck and C. Weisbuch,
Physical Review Letters 110, 177406 (2013)
http://dx.doi.org/10.1103/PhysRevLett.110.177406
Optically Anisotropic Thin Films by Shear-Oriented Assembly of Colloidal Nanorods,
J. Kim, J. Peretti, K. Lahlil, J. P. Boilot and T. Gacoin,
Advanced Materials 25, 3295 (2013)
http://dx.doi.org/10.1002/adma.201300594
Real Time Infra-Red Absorption Analysis of Nitridation of GaAs(001) by Hydrazine Solutions,
D. Paget, V. L. Berkovits, V. P. Ulin, F. Ozanam, P. Dumas, S. Kubsky, K. Lahlil, L. Bideux and G. Monier,
Journal of the Electrochemical Society 160, H229 (2013)
http://dx.doi.org/10.1149/2.063304jes
2012
A GaAs MEMS for AFM and spin injection
S. Arscott, E. Peytavit, D. Deresmes, T. Dargent, D. Vu, A. C. H. Rowe, D. Paget,
Sensors and Actuators A 179, 10 (2012)
https://doi.org/10.1016/j.sna.2012.02.033
Photoassisted Fowler-Nordheim-like tunneling from passivated GaAs microcantilevers
D. Paget, A. C. H. Rowe, S. Arscott and E. Peytavit,
Phys. Rev. B 85, 113301 (2012)
https://doi.org/10.1103/PhysRevB.85.113301
Etching or Stabilization of GaAs(001) under Alkali and Halogen Adsorption
O. E. Tereshchenko, D. Paget, K. V. Toropetsky, V. L. Alperovich, S. V. Eremeev, A. V. Bakulin, S. E. Kulkova, B. P. Doyle, S. Nannarone,
J. Phys. Chem. C 116, 8535 (2012)
https://doi.org/10.1021/jp211360d
Imaging ambipolar diffusion of photocarriers in GaAs thin films
D. Paget, F. Cadiz, A. C. H. Rowe, F. Moreau, S. Arscott, and E. Peytavit
J. Appl. Phys. 111, 123720 (2012)
https://doi.org/10.1063/1.4730396
Kinetics of intensity- and polarization-driven photo-induced material transport in azobenzene-containing thin films
F. Fabbri, Y. Lassailly, S. Monaco, K. Lahil, J. P. Boilot, and J. Peretti,
Phys. Rev. B 86, 115440 (2012)
https://doi.org/10.1103/PhysRevB.86.115440
Piezoresistance in Silicon at Uniaxial Compressive Stresses up to 3 GPa,
J. S. Milne, I. Favorskiy, A. C. H. Rowe, S. Arscott, C. Renner,
Phys. Rev. Lett. 108, 256801 (2012)
https://doi.org/10.1103/PhysRevLett.108.256801
2011
Evidence of Two Distinct Mechanisms Driving Photoinduced Matter Motion in Thin Films Containing Azobenzene Derivatives,
F. Fabbri, D. Garrot, K. Lahlil, J. P. Boilot, Y. Lassailly, and J. Peretti,
J. Phys. Chem. B 115, 1363 (2011)
https://doi.org/10.1021/jp110567z
Hydrazine sulfide wet treatment of GaAs(111) : nitridation on GaAs(111)B and sulfidation on GaAs(111)A,
V. L. Berkovits, V. P. Ulin, O. E. Tereshchenko, D. Paget, A. C. H. Rowe, P. Chiaradia, B. P. Doyle and S. Nannarone,
J. Electrochem. Soc. 158, D127 (2011)
https://doi.org/10.1149/1.3529936
Spin-dependent photoelectron tunneling from GaAs into magnetic cobalt
D. Vu, H. F. Jurca, F. Maroun, P. Allongue, N. Tournerie, A. C. H. Rowe, D. Paget, S. Arscott, E. Peytavit
Phys. Rev. B 83, 121304 (2011)
https://doi.org/10.1103/PhysRevB.83.121304
Transport and magnetic properties of Fe/GaAs Schottky junctions for spin polarimetry applications
O. E. Tereshchenko, D. Lamine, G. Lampel, Y. Lassailly, X. Li, D. Paget, J. Peretti,
J. Appl. Phys. 109, 113708 (2011)
https://doi.org/10.1063/1.3592976
How to control matter displacement by light polarization in solid state matrix containing azo molecules
F. Fabbri, D. Garrot, J.P. Boilot, K. Lahil, Y. Lassailly, J. Peretti
Global Journal of Physical Chemistry 2, 182 (2011)
Time scale effects in acute association between air-pollution and mortality,
M. Valari, L. Martinelli, E. Chatignoux, J. Crooks, and V. Garcia,
Geophys. Res. Lett. 38, L10806 (2011)
https://doi.org/10.1029/2011GL046872
2010
Cs-induced charge transfer on (2x4)GaAs(001) studied by photoemission,
O. E. Tereshchenko, D. Paget, P. Chiaradia, F. Wiame, A. Taleb-Ibrahimi,
Phys. Rev. B 81, 035304 (2010)
https://doi.org/10.1103/PhysRevB.81.035304
Fluidic assembly of hybrid MEMS: a GaAs-based microcantilever spin injector,
S. Arscott, E. Peytavit, D. Vu, A. C. H. Rowe and D. Paget,
J. Micromech. Microeng. 20, 025023 (2010)
https://doi.org/10.1088/0960-1317/20/2/025023
Local spin injectors using GaAs tips under light excitation
D. Vu, R. Ramdani, S. Bansropun, B. Gérard, E. Gil, Y. André, A. C. H. Rowe, D. Paget,
J. Appl. Phys. 107, 093712 (2010)
https://doi.org/10.1063/1.3374641
Photoassisted tunneling from free-standing GaAs thin films into metallic surfaces,
D. Vu, S. Arscott, E. Peytavit, R. Ramdani, E. Gil, Y. André, S. Bansropun, B. Gérard, A. C. H. Rowe and D. Paget,
Phys. Rev. B 82, 115331 (2010)
https://doi.org/10.1103/PhysRevB.82.115331
Imaging charge and spin diffusion of minority carriers in GaAs,
I. Favorskiy, D. Vu, E. Peytavit, S. Arscott, D. Paget and A. C. H. Rowe,
Rev. Sci. Inst. 81, 103902 (2010)
https://doi.org/10.1063/1.3493047
Giant Piezoresistance Effects in Silicon Nanowires and Microwires
J.S. Milne, S. Arscott, C. Renner, A.C.H. Rowe,
Phys. Rev. Lett. 105, 226802 (2010)
https://doi.org/10.1103/PhysRevLett.105.226802
GaAs spin injector microcantilever probe assembly via a releasable "epitaxial patch technology"
S. Arscott, E. Peytavit, D. Vu, A.C.H. Rowe, and D. Paget,
Procedia Engineering 5, 1039 (2010)
https://doi.org/10.1016/j.proeng.2010.09.287
Alternating photoinduced mass transport triggered by light polarization in azobenzene containing sol-gel films,
F. Fabbri, Y. Lassailly, K. Lahlil, J. P. Boilot, and J. Peretti,
Appl. Phys. Lett. 96, 081908 (2010)
https://doi.org/10.1063/1.3327341
Surface Plasmon-Enhanced Fluorescence Spectroscopy on Silver Based SPR Substrates,
L. Touahir, A. Tobias A. Jenkins, R. Boukherroub, A. C. Gouget-Laemmel, J.-N. Chazalviel, J. Peretti, F. Ozanam, and S. Szunerits,
J. Phys. Chem. C 114, 22582 (2010)
https://doi.org/10.1021/jp107402r
2009
Real-time near-field imaging of photoinduced matter motion in thin solid films containing azobenzene derivatives
D. Garrot, Y. Lassailly, K. Lahlil, J. P. Boilot, and J. Peretti,
Appl. Phys. Lett. 94, 033303 (2009)
https://doi.org/10.1063/1.3073742
Clean reconstructed InAs(111) A and B surfaces using chemical treatments and annealing,
O. E. Tereshchenko, D. Paget, A. C. H. Rowe, V. L. Berkovits, P. Chiaradia, B. P. Doyle and S. Nannarone,
Surf. Sci. 603, 518 (2009)
https://doi.org/10.1016/j.susc.2008.12.014
GaAs(111)A and B in hydrazine sulfide solutions : extreme polarity dependence of surface adsorption processes,
V. L. Berkovits, V. P. Ulin, O. E. Tereshchenko, D. Paget, A. C. H. Rowe, P. Chiaradia, B. P. Doyle and S. Nannarone,
Phys. Rev B 80, 233303, (2009)
https://doi.org/10.1103/PhysRevB.80.233303
2008
Silicon nanowires feel the pinch
A. C. H. Rowe
Nature Nanotechnology 3, 311 (2008)
https://doi.org/10.1038/nnano.2008.108
Light-induced nuclear quadrupolar relaxation in semiconductors
D. Paget, T. Amand, and J.-P. Korb
Phys. Rev. B 77, 245201 (2008)
https://doi.org/10.1103/PhysRevB.77.245201
Injection energy dependence of spin-polarized hot-electron transport through a ferromagnetic metal/oxide/semiconductor junction
N. Rougemaille, D. Lamine, G. Lampel, Y. Lassailly, and J. Peretti
Phys. Rev. B 77, 094409 (2008)
https://doi.org/10.1103/PhysRevB.77.094409
Geometrical Dependence of Decoherence by Electronic Interactions in a GaAs=GaAlAs Square Network
M. Ferrier, A. C. H. Rowe, S. Guèron, H. Bouchiat, C. Texier, and G. Montambaux,
Phys. Rev. Lett. 100, 146802 (2008)
https://doi.org/10.1103/PhysRevLett.100.146802
Giant Room-Temperature Piezoresistance in a Metal-Silicon Hybrid Structure
A. C. H. Rowe, A. Donoso-Barrera, Ch. Renner, S. Arscott
Phys. Rev. Lett. 100, 145501 (2008)
https://doi.org/10.1103/PhysRevLett.100.145501