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Accueil > Productions scientifiques > Electrons Photons Surfaces

2014 - 2022

par Anne-Marie - publié le , mis à jour le

2022

Engineering a U(1) lattice gauge theory in classical electric circuits
H. Riechert, J. C. Halimeh, V. Kasper, L. Bretheau, E. Zohar, P. Hauke, F. Jendrzejewski,
Physical Review B 105, 205141 (2022)
https://doi.org/10.1103/PhysRevB.105.205141

Localization Effect in Photoelectron Transport Induced by Alloy Disorder in
Nitride Semiconductor Compounds*
M. Sauty, N. M. S. Lopes, J.-P. Banon, Y. Lassailly, L. Martinelli, A. Alhassan, Y. C. Chow, S. Nakamura, J. S. Speck, C. Weisbuch, J. Peretti
Physical Review Letters 129, 216602 (2022)
https://doi.org/10.1103/PhysRevLett.129.216602

Efficiency and Forward Voltage of Blue and Green Lateral LEDs with V-shaped Defects and Random Alloy Fluctuation in Quantum Wells
C.-H. Ho, J. S. Speck, C. Weisbuch, Y.-R. Wu
Physical Review Applied 17, 014033 (2022)
https://doi.org/10.1103/PhysRevApplied.17.014033

Wigner-Weyl description of light absorption in disordered semiconductor alloys using the localization landscape theory*
J.-P. Banon, P. Pelletier, C. Weisbuch, S. Mayboroda, M. Filoche
Physical Review B 105, 125422 (2022)
https://doi.org/10.1103/PhysRevB.105.125422

Improved Vertical Carrier Transport for Green III-Nitride LEDs Using (In, Ga)N Alloy Quantum Barriers
C. Lynsky, G. Lheureux, B. Bonef, K.-S. Qwah, R. C. White, S. P. DenBaars, S. Nakamura, Y.-R. Wu, C. Weisbuch, J. S. Speck
Physical Review Applied 17, 054048 (2022)
https://doi.org/10.1103/PhysRevApplied.17.054048

Excitons in a disordered medium : A numerical study in InGaN quantum wells
A. David, C. Weisbuch
Physical Review Research 4, 043004 (2022)
https://doi.org/10.1103/PhysRevResearch.4.043004

Impact of doped barriers on the recombination coefficients of c-plane InGaN/GaN single quantum well light-emitting diodes
Y. C. Chow, C. Lynsky, S. Nakamura, S. P. DenBaars, C. Weisbuch, J. S. Speck
Applied Physics Letters 121, 181102 (2022)
https://doi.org/10.1063/5.0117318

Système de diagnostic à partir de l’optimisation optique de biopuces à fluorescence
H. Benisty, C. Weisbuch
Reflets de la Physique 72, 17 (2022)
https://doi.org/10.1051/refdp/202272017

Imaging the effect of high photoexcited densities on valley polarization and coherence in MoS2 monolayers
F. Cadiz, S. Gerl, T. Taniguchi, K. Watanabe
npj 2D materials and applications 6, 27 (2022)
https://doi.org/10.1038/s41699-022-00303-x

Investigation of N2 plasma GaAs surface passivation efficiency against air exposure : towards an enhanced diode
H. Mehdi, F. Réveret, C. Robert-Goumet, L. Bideux, B. Gruzza, P. E. Hoggan, J. Leymarie, Y. André, E. Gil, B. Pelissier, T. Levert, D. Paget, G. Monier
Applied Surface Science 579, 152191 (2022)
https://doi.org/10.1016/j.apsusc.2021.152191

Optically tunable metal-dielectric diffractive structures*
S. Chevalier, F. Fabbri, K. Lahlil, Y. Lassailly, L. Martinelli, T. Gacoin, J. Peretti
Physical Review Materials 6, 095202 (2022)
https://doi.org/10.1103/PhysRevMaterials.6.095202

Light-tunable optical cell manipulation via photoactive azobenzene-containing thin film bio-substrate*
O. Lefebvre, S. Pinto, K. Lahlil, J. Peretti, C. Smadja, C. Randriamampita, M. Lambert, F. Fabbri
Nano Select 3, 1337 (2022)
https://doi.org/10.1002/nano.202200019

A Photoemission Analysis of Gold on Silicon Regarding the Initial Stages of Nanowire Metal-Catalyzed Vapor–Liquid–Solid Growth
D. Ferrah, J. Penuelas, F. Boudaa, C. Botella, M. Silly, F. Sirotti, G. Grenet
The Journal of Physical Chemistry C 126, 18692 (2022)
https://doi.org/10.1021/acs.jpcc.2c05319

Efficient valley polarization of charged excitons and resident carriers in Molybdenum disulfide monolayers by optical pumping
S. Park, S. Arscott, T. Taniguchi, K. Watanabe, F. Sirotti, F. Cadiz
Commun. Phys. 5, 73 (2022)
https://doi.org/10.1038/s42005-022-00850-1

Surface photovoltage dynamics at passivated silicon surfaces : influence of substrate doping and surface termination
D. Pierucci, M. G. Silly, H. Tissot, P. Hollander, F. Sirotti, F. Rochet
Faraday Discussions 236, 442 (2022)
http://dx.doi.org/10.1039/D1FD00107H

Controlling homogeneity of the first lithiation in methylated amorphous silicon*
F. Yue, A. Cheriet, M. Panagopoulou, D. Aureau, A. C. H. Rowe, C. Henry-de-Villeneuve, M. Rosso, F. Ozanam
Electrochimica Acta 403, 139655 (2022)
https://doi.org/10.1016/j.electacta.2021.139655

Anomalous ambipolar transport in depleted GaAs nanowires
H. Hijazi, D. Paget, A C. H. Rowe, G. Monier, K. Lahlil, E. Gil, A. Trassoudaine, F. Cadiz, Y. André, and C. Robert-Goumet
Physical Review B 105, 195204 (2022)
https://doi.org/10.1103/PhysRevB.105.195204

Probing local emission properties in InGaN/GaN quantum wells by scanning tunneling luminescence microscopy
M. Sauty, N. Alyabyeva, C. Lynsky, Y.C. Chow, S. Nakamura, J. S. Speck, Y. Lassailly, A. C. H. Rowe, C. Weisbuch, J. Peretti
Physica Status Solidi (b) 2200365 (2022)
https://doi.org/10.1002/pssb.202200365

Nanoscale Mapping of Sub-Gap Electroluminescence from Step-Bunched, Oxidized 4H-SiC Surfaces
N. Alyabyeva, J. Ding, M. Sauty, J. Woerle, Y. Jousseaume, G. Ferro, J. C. McCallum, J. Peretti, B. C. Johnson, A. C. H. Rowe
Physica Status Solidi (b) 2200356 (2022)
https://doi.org/10.1002/pssb.202200356
A systematic study of spin‐dependent recombination in GaAs1−xNx as a function of nitrogen content
A. C. Ulibarri, R. Kothari, A. Garcia, J. C. Harmand, S. Park, F. Cadiz, Y. Lassailly, J. Peretti, A. C. H. Rowe
Physica Status Solidi (b) 2200361 (2022)
https://doi.org/10.1002/pssb.202200361

2021

Weyl Josephson Circuits,
V. Fatemi, A. Akhmerov, L. Bretheau
Physical Review Research 3, 013288 (2021)
https://doi.org/10.1103/PhysRevResearch.3.013288

Superconducting on-chip spectrometer for mesoscopic quantum systems
J. Griesmar, R. H. Rodriguez, V. Benzoni, J.-D. Pillet, J.-L. Smirr, F. Lafont, Ç. Ö. Girit
Physical Review Research 3, 043078 (2021)
https://doi.org/10.1103/PhysRevResearch.3.043078

Transconductance quantization in a topological Josephson tunnel junction circuit
L. Peyruchat, J. Griesmar, J.-D. Pillet, and Ç. Ö. Girit
Physical Review Research 3, 013289 (2021)
https://doi.org/10.1103/PhysRevResearch.3.013289

Disorder effects in nitride semiconductors : impact on fundamental and device properties
C. Weisbuch, S. Nakamura , Y.-R. Wu, J. S. Speck
Nanophotonics 10, 3 (2021)
https://doi.org/10.1515/nanoph-2020-0590

High efficiency blue InGaN microcavity light-emitting diode with a 205 nm ultra-short cavity
J. Back, M. S. Wong, S. P. DenBaars, C. Weisbuch, S. Nakamura
Applied Physics Letters 118, 031102 (2021)
https://doi.org/10.1063/5.0039773

Blue semipolar InGaN microcavity light-emitting diode with varying cavity lengths from 113 to 290 nm
J. Back, V. Rienzi, M. S. Wong, H. Li, S. P. DenBaars, C. Weisbuch, S. Nakamura
Applied Physics Express 14, 042003 (2021)
https://doi.org/10.35848/1882-0786/abebb3

Reduction of efficiency droop in c-plane InGaN/GaN light-emitting diodes using a thick single quantum well with doped barriers
Y. C. Chow, C. Lynsky, F. Wu, S. Nakamura, S. P. DenBaars, C. Weisbuch, J. S. Speck
Applied Physics Letters 119, 221102 (2021)
https://doi.org/10.1063/5.0073741

Three-Dimensional Modeling of Minority-Carrier Lateral Diffusion Length Including Random Alloy Fluctuations in (In, Ga)N and (Al,Ga)N Single Quantum Wells
H.-T. Shen, C. Weisbuch, J. S. Speck, Y.-R. Wu
Physical Review Applied 16, 024054 (2021)
https://doi.org/10.1103/PhysRevApplied.16.024054

Charge and spin transport over record distances in GaAs metallic n-type nanowires
H. Hijazi, D. Paget, G. Monier, G. Grégoire, J. Leymarie, E. Gil, F. Cadiz, C. Robert-Goumet, Y. André
Physical Review B 103, 195314 (2021)
https://doi.org/10.1103/PhysRevB.103.195314

Quantitative correlation of hot electron emission to Auger recombination in the active region of c-plane blue III-N LEDs
W. Y. Ho, Y. C. Chow, D. J. Myers, F. Wu, J. Peretti, C. Weisbuch, J. S. Speck
Applied Physics Letters 119, 051105 (2021)
https://aip.scitation.org/doi/pdf/10.1063/5.0054636

Impact of ex-PAN carbon fibers thermal treatment on the mechanical behavior of C/SiC composites and on the fiber/matrix coupling
C. Fellah, J. Braun, C. Sauder, F. Sirotti, M.H. Berger
Carbon Trends 5, 100107 (2021)
https://doi.org/10.1016/j.cartre.2021.100107

Spin/valley pumping of resident electrons in WSe2 and WS2 monolayers
C. Robert, S. Park, F. Cadiz, L. Lombez, L. Ren, H. Tornatzky, A. C. H. Rowe, D. Paget, F. Sirotti, M. Yang, D.-V. Tuan, T. Taniguchi, B. Urbaszek, K. Watanabe, T. Amand, H. Dery, X. Marie
Nature Communications 12, 5455 (2021)
https://doi.org/10.1038/s41467-021-25747-5

Subpicosecond metamagnetic phase transition in FeRh driven by non-equilibrium electron dynamics
F. Pressacco, D. Sangalli, V. Uhlíř, D. Kutnyakhov, J.-A. Arregi, S.-Y. Agustsson, G. Brenner, H. Redlin, M. Heber, D. Vasilyev, J. Demsar, G. Schönhense, M. Gatti, A. Marini, W. Wurth, F. Sirotti
Nature Communications 12, 5088 (2021)
https://doi.org/10.1038/s41467-021-25347-3

Imaging Seebeck drift of excitons and trions in MoSe2 monolayers
S. Park, B. Han, C. Boule, D. Paget, A. C. H. Rowe, F. Sirotti, T. Taniguchi, K. Watanabe, C. Robert, L. Lombez, B. Urbaszek, X. Marie, F. Cadiz
2D Materials 8, 045014 (2021)
https://doi.org/10.1088/2053-1583/ac171f

Piezoresistance in defect-engineered silicon*
H. Li, A. Thayil, C. T. K. Lew, M. Filoche, B. C. Johnson, J. C. McCallum, S. Arscott, A. C. H. Rowe
Physical Review Applied 15, 014046 (2021)
https://doi.org/10.1103/PhysRevApplied.15.014046

2020

Scattering description of Andreev molecules
J.-D. Pillet, V. Benzoni, J. Griesmar, J.-L. Smirr, Ç. Ö. Girit
SciPost Physics Core 2, 009 (2020)
https://doi.org/10.21468/SciPostPhysCore.2.2.009

Review—On The Search for Efficient Solid State Light Emitters : Past, Present, Future
C. Weisbuch
ECS Journal of Solid State Science & Technolology 9, 016022 (2020)
https://doi.org/10.1149/2.0392001JSS

Barriers to carrier transport in multiple quantum well nitride-based
c-plane green light emitting diodes
C. Lynsky, A. I. Alhassan, G. Lheureux, B. Bonef, S. P. DenBaars, S. Nakamura, Y.-R. Wu, C. Weisbuch, J. S. Speck
Physical Review Materials 4, 054604 (2020)
https://doi.org/10.1103/PhysRevMaterials.4.054604

Unidirectional luminescence from InGaN/GaN quantum-well metasurfaces
P. P. Iyer, R. A. DeCrescent, Y. Mohtashami, G. Lheureux, N. A. Butakov, A. Alhassan, C. Weisbuch, S. Nakamura, S. P. DenBaars, J. A. Schuller
Nature Photonics 14, 543 (2020)
https://doi.org/10.1038/s41566-020-0641-x

Violet semipolar (20-2-1) InGaN microcavity light-emitting diode with a 200 nm ultra-short cavity length
J. Back, M. S. Wong, J. Kearns, S. P. DenBaars, C. Weisbuch, S. Nakamura
Optics Express 28, 29991 (2020)
https://doi.org/10.1364/OE.401640

Transmission Geometry Laser Lighting with a Compact Emitter
C. E. Reilly, G. Lheureux, C. Cozzan, E. Zeitz, T. Margalith, S. Nakamura, R. Seshadri, C. Weisbuch, S. P. DenBaars
Physica Status Solidi (a) 217, 2000391 (2020)
https://doi.org/10.1002/pssa.202000391

Impact of Alloy-Disorder-Induced Localization on Hole Diffusion in Highly Excited
c-Plane and m-Plane (In,Ga) N Quantum Wells
R. Aleksiejūnas, K. Nomeika, O. Kravcov, S. Nargelas, L. Kuritzky, C. Lynsky, S. Nakamura, C. Weisbuch, J. S. Speck
Physical Review Applied 14, 054043 (2020)
https://doi.org/10.1103/PhysRevApplied.14.054043

A 3D simulation comparison of carrier transport in green and blue c-plane multi-quantum well nitride light emitting diodes
G. Lheureux, C. Lynsky, Y.-R. Wu, J. S. Speck, C. Weisbuch
Journal of Applied Physics 128, 235703 (2020)
https://doi.org/10.1063/1.5143276

Evidence for trap-assisted Auger recombination in MBE grown InGaN quantum wells by electron emission spectroscopy
D. J. Myers, A. C. Espenlaub, K. Gelzinyte, E. C. Young, L. Martinelli, J. Peretti, C. Weisbuch, J. S. Speck
Applied Physics Letters 116, 091102 (2020)
https://doi.org/10.1063/1.5125605116

Ultrafast dynamics of hot carriers in a quasi–two-dimensional electron gas on InSe
Z. Chena, J. Sjakstea, J. Dong, A. Taleb-Ibrahimi, J.-P. Rueff, A. Shukla, J. Peretti, E. Papalazarou, M. Marsi, L. Perfetti
Proceedings of the National Academy of Science 117, 21962 (2020)
https://doi.org/10.1073/pnas.2008282117

Unraveling intrinsic correlation effects with angle-resolved photoemission spectroscopy
J.-S. Zhou, L. Reining, A. Nicolaou, A. Bendounan, K. Ruotsalainen, M. Vanzini, J.J. Kas, J.J. Rehr, M. Muntwiler, V. N. Strocov, F. Sirotti, M. Gatti
PNAS 117, 28596 (2020)
https://doi.org/10.1073/pnas.2012625117

Influence of the carbon interface on the mechanical behavior of SiC/SiC composites
C. Fellah, J. Braun, C. Sauder, F. Sirotti, M-H. Berger
Composites Part A : Applied Science and Manufacturing 133, 105867 (2020)
https://doi.org/10.1016/j.compositesa.2020.105867

Single-layer graphene on epitaxial FeRh thin films
V. Uhlíř, F. Pressacco, J.-A. Arregi, P. Procházka, S. Průša, M. Potoček, T. Šikola, J. Čechal, A. Bendounan, F. Sirotti
Applied Surface Science 514, 145923 (2020)
https://doi.org/10.1016/j.apsusc.2020.14923

Is the spin of the electron mobile like its charge ?
F. Cadiz, A. C. H. Rowe, D. Paget
Reflets de la physique 65, 6 (2020)
https://doi.org/10.1051/refdp/202065006

2019

Coherent control of a hybrid superconducting circuit made with graphene-based van der Waals heterostructures
J. I.-J. Wang, D. Rodan-Legrain, L. Bretheau, D. L. Campbell, B. Kannan, D. Kim, M. Kjaergaard, P. Krantz, G. O. Samach, F. Yan, J. L. Yoder, K. Watanabe, T. Taniguchi, T. P. Orlando, S. Gustavsson, P. Jarillo-Herrero, W. D. Oliver
Nature Nanotechnology 14, 120-125 (2019)
https://doi.org/10.1038/s41565-018-0329-2

Guiding Dirac Fermions in Graphene with a Carbon Nanotube
A. Cheng, T. Taniguchi, K. Watanabe, P. Kim, J.-D. Pillet
Physical Review Letters 123, 216804 (2019)
https://doi.org/10.1103/PhysRevLett.123.216804

Nonlocal Josephson Effect in Andreev Molecules
J.-D. Pillet, V. Benzoni, J. Griesmar, J.-L. Smirr, and Ç. Ö. Girit
Nano Letters 19, 7138 (2019)
https://doi.org/10.1021/acs.nanolett.9b02686

Injection Locking and Parametric Locking in a Superconducting Circuit
D. Marković, J.-D. Pillet, E. Flurin, N. Roch, B. Huard
Physical Review Applied 12, 024034 (2019)
https://doi.org/10.1103/PhysRevApplied.12.024034

Semipolar III-nitride laser diodes for solid-state lighting
S. Mehari, D. A. Cohen, D. L. Becerra, H. Zhang, C. Weisbuch, J. S. Speck, S. Nakamura, S. P. DenBaars
Proceedings SPIE Volume 10939, Novel In-Plane Semiconductor Lasers XVIII ; 109390G (2019) https://doi.org/10.1117/12.2506798

Universality of fold-encoded localized vibrations in enzymes*
Y. Chalopin, F. Piazza, S. Mayboroda, C. Weisbuch, M. Filoche
Scientific Reports 9, 12835 (2019)
https://doi.org/10.1038/s41598-019-48905-8

Evidence of trap-assisted Auger recombination in low radiative efficiency MBE-grown III-nitride LEDs
A. C. Espenlaub, D. J. Myers, E. C. Young, S. Marcinkevičius, C. Weisbuch, J. S. Speck
Journal of Applied Physics 126, 184502 (2019)
https://doi.org/10.1063/1.5096773

DFT and experimental FTIR investigations of early stages of GaAs (100) and (111)B surface nitridation
G. Monier, P. E. Hoggan, C. Robert-Goumet, L. Bideux, D. Paget, P. Dumas, S. Kubsky
Applied Surface Science 405, 787 (2019)
https://doi.org/10.1016/j.apsusc.2018.09.244

Direct measurement of hot-carrier generation in a semiconductor barrier heterostructure : Identification of the dominant mechanism for thermal droop
D. J. Myers, K. Gelžinytė, A. I. Alhassan, L. Martinelli, J. Peretti, S. Nakamura, C. Weisbuch, J. S. Speck,
Physical Review B 100, 125303 (2019)
https://doi.org/10.1103/PhysRevB.100.125303

Transmission of high-energy electrons through metal-semiconductor Schottky junctions
E. Monteblanco, F. Donatini, M. Hehn, D. Lacour, Y. Lassailly, J. Peretti, N. Rougemaille
Physical Review B 100, 205301 (2019)
https://doi.org/10.1103/PhysRevB.100.205301

Spin- and angle-resolved photoemission studies of the electronic structure of Si(110)“16×2” surfaces
N. K. Lewis, Y. Lassailly, L. Martinelli, I. Vobornik, J. Fujii, C. Bigi, E. Brunkow, N. B. Clayburn, T. J. Gay, W. R. Flavell, and E. A. Seddon
Physical Review B 100, 075302 (2019)
https://doi.org/10.1103/PhysRevB.100.075302

Electronic coupling in the F4-TCNQ/single-layer GaSe heterostructure
L. Khalil, D. Pierucci, E. Papalazarou, J. Chaste, M. G. Silly, F. Sirotti, M. Eddrief, L. Perfetti, E. Lhuillier, A. Ouerghi
Physical Review Materials 3, 084002 (2019)
https://doi.org/10.1103/PhysRevMaterials.3.084002

Transient quantum isolation and critical behavior in the magnetization dynamics of half-metallic manganites
T. Pincelli, R. Cucini, A. Verna, F. Borgatti, M. Oura, K. Tamasaku, H. Osawa, T.-L. Lee, C. Schlueter, S. Günther, C. H. Back, M. Dell’Angela, R. Ciprian, P. Orgiani, A. Petrov, F. Sirotti, V. A. Dediu, I. Bergenti, P. Graziosi, F. Miletto Granozio, Y. Tanaka, M. Taguchi, H. Daimon, J. Fujii, G. Rossi, G. Panaccione
Physical Review B 100, 045118 (2019)
https://doi.org/10.1103/PhysRevB.100.045118

Mechanical stress dependence of the Fermi level pinning on an oxidized silicon surface
H. Li, L. Martinelli, F. Cadiz, A. Bendounan, S. Arscott, F. Sirotti, A. C. H. Rowe
Applied Surface Science 478, 284 (2019)
https://doi.org/10.1016/j.apsusc.2019.01.207

Evidence of direct electronic band gap in two-dimensional van der Waals indium selenide crystals
H. Henck, D. Pierucci, J. Zribi, F. Bisti, E. Papalazarou, J.-C. Girard, J. Chaste, F. Bertran, P. Le Fèvre, F. Sirotti, L. Perfetti, C. Giorgetti, A. Shukla, J. E. Rault, A. Ouerghi
Physical Review Materials 3, 034004 (2019)
https://doi.org/10.1103/PhysRevMaterials.3.034004

Giant, anomalous piezoimpedance in silicon-on-insulator
H. Li, C.T.K. Lew, B.C. Johnson, J.C. McCallum, S. Arscott, and A.C.H. Rowe
Physical Review Applied 11, 044010 (2019)
https://doi.org/10.1103/PhysRevApplied.11.044010

Photovoltage-induced blockade of charge and spin diffusion in semiconducting thin films
S. Park, D. Paget, V. L. Berkovits, V. P. Ulin, P. A. Alekseev, N. A. Kaliuzhnyi, S. A. Mintairov, F. Cadiz
Journal of Applied Physics 126, 025701 (2019)
https://doi.org/10.1063/1.5098878

Designing and building a low-cost portable FT-NMR spectrometer in 2019 : A modern challengeConcevoir et construire un spectromètre FT-RMN portable à bas coût en 2019 : un défi moderne
A. Louis-Joseph, P. Lesot
Comptes Rendus Chimie 22, 695 (2019)
https://doi.org/10.1016/j.crci.2019.07.001

2018

Identification of low-energy peaks in electron emission spectroscopy of InGaN/GaN light-emitting diodes,
D. J. Myers, K. Gelžinytė, W. Y. Ho, J. Iveland, L. Martinelli, J. Peretti, C. Weisbuch, and J. S. Speck
Journal of Applied Physics 124, 055703 (2018)
http://dx.doi.org/10.1063/1.5030208

Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy,
W. Hahn, J.-M. Lentali, P. Polovodov, N. Young, S. Nakamura, J. S. Speck, C. Weisbuch, M. Filoche, Y. R. Wu, M. Piccardo, F. Maroun, L. Martinelli, Y. Lassailly, and J. Peretti,
Physical Review B 98, 045305 (2018)
http://dx.doi.org/10.1103/PhysRevB.98.045305

Ultrafast electron dynamics reveal the high potential of InSe for hot-carrier optoelectronics,
Z. Chen, C. Giorgetti, J. Sjakste, R. Cabouat, V. Véniard, Z. Zhang, A. Taleb-Ibrahimi, E. Papalazarou, M. Marsi, A. Shukla, J. Peretti and L. Perfetti,
Physical Review B 97, 241201 (2018)
http://dx.doi.org/10.1103/PhysRevB.97.241201

Exciton diffusion in WSe2 monolayers embedded in a van der Waals heterostructure,
F. Cadiz, C. Robert, E. Courtade, M. Manca, L. Martinelli, T. Taniguchi, K. Watanabe, T. Amand, A. C. H. Rowe, D. Paget, B. Urbaszek and X. Marie,
Applied Physics Letters 112, 152106 (2018)
http://dx.doi.org/10.1063/1.5026478

Laser induced phase transition in epitaxial FeRh layers studied by pump‐probe valence band photoemission,
F. Pressacco, V. Uhlíř, M. Gatti, A. Nicolaou, A. Bendounan, J. A. Arregi, S. K. K. Patel, E. E. Fullerton, D. Krizmancic and S. F. Sirotti,
Structural Dynamics 5, 034501 (2018)
http://dx.doi.org/10.1063/1.5027809

Auger-generated hot carrier current in photo-excited forward biased single quantum well blue light emitting diodes,
A. C. Espenlaub, A. I. Alhassan, S. Nakamura, C. Weisbuch and J. S. Speck,
Applied Physics Letters 112, 141106 (2018)
http://dx.doi.org/10.1063/1.5021475

Prospects for 100% wall-plug efficient III-nitride LEDs,
L. Y. Kuritzky, C. Weisbuch and J. S. Speck,
Optics Express 26, 16600 (2018)
http://dx.doi.org/10.1364/OE.26.016600

Historical perspective on the physics of artificial lighting,
C. Weisbuch,
Comptes Rendus Physique 19, 89 (2018)
http://dx.doi.org/10.1016/j.crhy.2018.03.001

LEDs : The new revolution in lighting Foreword,
C. Weisbuch, E. Spitz and A. David,
Comptes Rendus Physique 19, 85 (2018)
http://dx.doi.org/10.1016/j.crhy.2018.05.001

2017

Correlation between structure, electronic properties, and magnetism in CoxGd1-x thin amorphous films,
N. Bergeard, A. Mougin, M. Izquierdo, E. Fonda and F. Sirotti,
Physical Review B 96, 064418 (2017)
http://dx.doi.org/10.1103/PhysRevB.96.064418

Spin and recombination dynamics of excitons and free electrons in p-type GaAs : Effect of carrier density,
F. Cadiz, D. Lagarde, P. Renucci, D. Paget, T. Amand, H. Carrere, A. C. H. Rowe and S. Arscott,
Applied Physics Letters 110, 082101 (2017)
http://dx.doi.org/10.1063/1.4977003

Ambipolar spin diffusion in p-type GaAs : A case where spin diffuses more than charge,
F. Cadiz, V. Notot, J. Filipovic, D. Paget, C. P. Weber, L. Martinelli, A. C. H. Rowe and S. Arscott,
Journal of Applied Physics 122, 095703 (2017)
http://dx.doi.org/10.1063/1.4985831

Ultrafine tuning of the metal volume fraction in silver/silicate nanocomposites near the percolation threshold,
T. Das Gupta, I. Maurin, A. C. H. Rowe and T. Gacoin,
Nanoscale 9, 3504 (2017)
http://dx.doi.org/10.1039/c6nr08918f

A photoemission spectroscopy study of the initial oxidation of epitaxial fcc and bcc Fe films grown on Cu(100),
R. de Mendonca, M. D. Martins, M. Silly, F. Sirotti and W. A. A. Macedo,
Thin Solid Films 636, 567 (2017)
http://dx.doi.org/10.1016/j.tsf.2017.06.049

Localization landscape theory of disorder in semiconductors. I. Theory and modeling,
M. Filoche, M. Piccardo, Y. R. Wu, C. K. Li, C. Weisbuch and S. Mayboroda,
Physical Review B 95, 144204 (2017)
http://dx.doi.org/10.1103/PhysRevB.95.144204

Localization landscape theory of disorder in semiconductors. II. Urbach tails of disordered quantum well layers,
M. Piccardo, C. K. Li, Y. R. Wu, J. S. Speck, B. Bonef, R. M. Farrell, M. Filoche, L. Martinelli, J. Peretti and C. Weisbuch,
Physical Review B 95, 144205 (2017)
http://dx.doi.org/10.1103/PhysRevB.95.144205

Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes,
C. K. Li, M. Piccardo, L. S. Lu, S. Mayboroda, L. Martinelli, J. Peretti, J. S. Speck, C. Weisbuch, M. Filoche and Y. R. Wu,
Physical Review B 95, 144206 (2017)
http://dx.doi.org/10.1103/PhysRevB.95.144206

Chemical and kinetic insights into the Thermal Decomposition of an Oxide Layer on Si(111) from Millisecond Photoelectron Spectroscopy,
J. J. Gallet, M. G. Silly, M. El Kazzi, F. Bournel, F. Sirotti and F. Rochet,
Scientific Reports 7, 14257 (2017)
http://dx.doi.org/10.1038/s41598-017-14532-4

Surface-enhanced gallium arsenide photonic resonator with quality factor of 6 x 10(6),
B. Guha, F. Marsault, F. Cadiz, L. Morgenroth, V. Ulin, V. Berkovitz, A. Lemaitre, C. Gomez, A. Amo, S. Combrie, B. Gerard, G. Leo and I. Favero,
Optica 4, 218 (2017)
http://dx.doi.org/10.1364/optica.4.000218

Protected surface state in stepped Fe (0181),
M. Izquierdo, P. Torelli, J. Fujii, G. Panaccione, I. Vobornik, G. Rossi and F. Sirotti,
Scientific Reports 7, 6609 (2017)
http://dx.doi.org/10.1038/s41598-017-06896-4

Monitoring the orientation of rare-earth-doped nanorods for flow shear tomography,
J. Kim, S. Michelin, M. Hilbers, L. Martinelli, E. Chaudan, G. Amselem, E. Fradet, J. P. Boilot, A. M. Brouwer, C. N. Baroud, J. Peretti and T. Gacoin,
Nature Nanotechnology 12, 914 (2017)
http://dx.doi.org/10.1038/nnano.2017.111

High wall-plug efficiency blue III-nitride LEDs designed for low current density operation,
L. Y. Kuritzky, A. C. Espenlaub, B. P. Yonkee, C. D. Pynn, S. P. DenBaars, S. Nakamura, C. Weisbuch and J. S. Speck,
Optics Express 25, 30696 (2017)
http://dx.doi.org/10.1364/OE.25.030696

Domain formation mechanism of the Si(110) "16 x 2" reconstruction,
N. K. Lewis, N. B. Clayburn, E. Brunkow, T. J. Gay, Y. Lassailly, J. Fujii, I. Vobornik, W. R. Flavell and E. A. Seddon,
Physical Review B 95, 205306 (2017)
http://dx.doi.org/10.1103/PhysRevB.95.205306

Luminescence imaging of photoelectron spin precession during drift in a p-type GaAs microfabricated Hall bar,
V. Notot, D. Paget, A. C. H. Rowe, L. Martinelli, F. Cadiz and S. Arscott,
Journal of Applied Physics 121, 125703 (2017)
http://dx.doi.org/10.1063/1.4979097

A. C. H. Rowe, I. Zhaksylykova, G. Dilasser, Y. Lassailly and J. Peretti, Polarizers, optical bridges, and Sagnac interferometers for nanoradian polarization rotation measurements, Review of Scientific Instruments 88, 043903 (2017)
http://dx.doi.org/10.1063/1.4980038

Pump-probe experiments at the TEMPO beamline using the low-alpha operation mode of Synchrotron SOLEIL,
M. G. Silly, T. Ferte, M. A. Tordeux, D. Pierucci, N. Beaulieu, C. Chauvet, F. Pressacco, F. Sirotti, H. Popescu, V. Lopez-Flores, M. Tortarolo, M. Sacchi, N. Jaouen, P. Hollander, J. P. Ricaud, N. Bergeard, C. Boeglin, B. Tudu, R. Delaunay, J. Luning, G. Malinowski, M. Hehn, C. Baumier, F. Fortuna, D. Krizmancic, L. Stebel, R. Sergo and G. Cautero,
Journal of Synchrotron Radiation 24, 886 (2017)
http://dx.doi.org/10.1107/s1600577517007913

2016

Optical Patterning of Sol-Gel Silica Coatings,
N. Desboeufs, A. D. Vu, K. Lahlil, Y. Lassailly, L. Martinelli, J. P. Boilot, J. Peretti and T. Gacoin,
Advanced Optical Materials 4, 313 (2016)
http://dx.doi.org/10.1002/adom.201500417

Intervalley energy of GaN conduction band measured by femtosecond pump-probe spectroscopy,
S. Marcinkevicius, T. K. Uzdavinys, H. M. Foronda, D. A. Cohen, C. Weisbuch and J. S. Speck,
Physical Review B 94, 235205 (2016)
http://dx.doi.org/10.1103/PhysRevB.94.235205

Geometric and chemical components of the giant piezoresistance in silicon nanowires,
M. M. McClarty, N. Jegenyes, M. Gaudet, C. Toccafondi, R. Ossikovski, F. Vaurette, S. Arscott, and A. C. H. Rowe,
Applied Physics Letters 109, 023102 (2016)
http://dx.doi.org/10.1063/1.4955403

Diodes émettrices de lumière bleue : le prix Nobel de physique 2014,
C. Weisbuch,
Reflets de la Physique 47-48, 5 (2016)
http://dx.doi.org/10.1051/refdp/20164748054

Germanium doping of GaN by metalorganic chemical vapor deposition for polarization screening applications,
N. G. Young, R. M. Farrell, M. Iza, S. Nakamura, S. P. DenBaars, C. Weisbuch and J. S. Speck,
Journal of Crystal Growth 455, 105 (2016)
http://dx.doi.org/10.1016/j.jcrysgro.2016.09.074

Polarization field screening in thick (0001) InGaN/GaN single quantum well light-emitting diodes,
N. G. Young, R. M. Farrell, S. Oh, M. Cantore, F. Wu, S. Nakamura, S. P. DenBaars, C. Weisbuch, and J. S. Speck,
Applied Physics Letters 108, 061105 (2016)
http://dx.doi.org/10.1063/1.4941815

2015

Effect of the Pauli principle on photoelectron spin transport in p(+) GaAs,
F. Cadiz, D. Paget, A. C. H. Rowe, T. Amand, P. Barate and S. Arscott,
Physical Review B 91, 165203 (2015)
http://dx.doi.org/10.1103/PhysRevB.91.165203

Ambipolar spin-spin coupling in p(+)-GaAs,
F. Cadiz, D. Paget, A. C. H. Rowe and S. Arscott,
Physical Review B 92, 121203 (2015)
http://dx.doi.org/10.1103/PhysRevB.92.121203

Absence of carrier separation in ambipolar charge and spin drift in p(+)-GaAs,
F. Cadiz, D. Paget, A. C. H. Rowe, L. Martinelli and S. Arscott,
Applied Physics Letters 107, 162101 (2015)
http://dx.doi.org/10.1063/1.4933189

Central role of electronic temperature for photoelectron charge and spin mobilities in p(+)-GaAs,
F. Cadiz, D. Paget, A. C. H. Rowe, E. Peytavit and S. Arscott,
Applied Physics Letters 106, 092108 (2015)
http://dx.doi.org/10.1063/1.4914357

Electroluminescence characteristics of blue InGaN quantum wells on m-plane GaN "double miscut" substrates,
L. Y. Kuritzky, D. J. Myers, J. Nedy, K. M. Kelchner, S. Nakamura, S. P. DenBaars, C. Weisbuch and J. S. Speck,
Applied Physics Express 8, 061002 (2015)
http://dx.doi.org/10.7567/apex.8.061002

Low damage dry etch for III-nitride light emitters,
J. G. Nedy, N. G. Young, K. M. Kelchner, Y. L. Hu, R. M. Farrell, S. Nakamura, S. P. DenBaars, C. Weisbuch and J. S. Speck,
Semiconductor Science and Technology 30, 085019 (2015)
http://dx.doi.org/10.1088/0268-1242/30/8/085019

Low-energy electro- and photo-emission spectroscopy of GaN materials and devices,
M. Piccardo, J. Iveland, L. Martinelli, S. Nakamura, J. W. Choi, J. S. Speck, C. Weisbuch and J. Peretti,
Journal of Applied Physics 117, 112814 (2015)
http://dx.doi.org/10.1063/1.4913928

A closer look at the light-induced changes in the mechanical properties of azobenzene-containing polymers by statistical nanoindentation,
L. Sorelli, F. Fabbri, J. Frech-Baronet, A. D. Vu, M. Fafard, T. Gacoin, K. Lahlil, L. Martinelli, Y. Lassailly and J. Peretti,
Journal of Materials Chemistry C 3, 11055 (2015)
http://dx.doi.org/10.1039/c5tc01917f

The efficiency challenge of nitride light-emitting diodes for lighting,
C. Weisbuch, M. Piccardo, L. Martinelli, J. Iveland, J. Peretti and J. S. Speck,
Physica Status Solidi a-Applications and Materials Science 212, 899 (2015)
http://dx.doi.org/10.1002/pssa.201431868

2014

Vapor liquid solid-hydride vapor phase epitaxy (VLS-HVPE) growth of ultra-long defect-free GaAs nanowires : Ab initio simulations supporting center nucleation,
Y. Andre, K. Lekhal, P. Hoggan, G. Avit, F. Cadiz, A. Rowe, D. Paget, E. Petit, C. Leroux, A. Trassoudaine, M. R. Ramdani, G. Monier, D. Colas, R. Ajib, D. Castelluci and E. Gil,
Journal of Chemical Physics 140, 194706 (2014) ;
http://dx.doi.org/10.1063/1.4874875

All optical method for investigation of spin and charge transport in semiconductors : Combination of spatially and time-resolved luminescence,
F. Cadiz, P. Barate, D. Paget, D. Grebenkov, J. P. Korb, A. C. H. Rowe, T. Amand, S. Arscott and E. Peytavit,
Journal of Applied Physics 116, 023711 (2014)
http://dx.doi.org/10.1063/1.4889799

RGE effects on neutrino masses in partial split supersymmetry,
F. Cadiz and M. A. Diaz,
International Journal of Modern Physics A 29, 1450158 (2014)
http://dx.doi.org/10.1142/s0217751x14501589

Piezoresistive Properties of Ag/Silica Nano-Composite Thin Films Close to the Percolation Threshold,
T. Das Gupta, T. Gacoin and A. C. H. Rowe,
Advanced Functional Materials 24, 4522 (2014)
http://dx.doi.org/10.1002/adfm.201303775

Extraction Length Determination in Patterned Luminescent Sol-Gel Films,
L. Devys, G. Dantelle, A. Revaux, V. Kubytskyi, D. Paget, H. Benisty and T. Gacoin,
Advanced Optical Materials 2, 81 (2014)
http://dx.doi.org/10.1002/adom.201300304

Origin of electrons emitted into vacuum from InGaN light emitting diodes,
J. Iveland, M. Piccardo, L. Martinelli, J. Peretti, J. W. Choi, N. Young, S. Nakamura, J. S. Speck and C. Weisbuch,
Applied Physics Letters 105, 052103 (2014)
http://dx.doi.org/10.1063/1.4892473

Optimized combination of intrinsic and form birefringence in oriented LaPO4 nanorod assemblies,
J. Kim, L. Martinelli, K. Lahlil, J. P. Boilot, T. Gacoin and J. Peretti,
Applied Physics Letters 105, 061102 (2014)
http://dx.doi.org/10.1063/1.4892524

Optical detection of spin-filter effect for electron spin polarimetry,
X. Li, O. E. Tereshchenko, S. Majee, G. Lampel, Y. Lassailly, D. Paget and J. Peretti,
Applied Physics Letters 105, 052402 (2014)
http://dx.doi.org/10.1063/1.4892073

Determination of the first satellite valley energy in the conduction band of wurtzite GaN by near-band-gap photoemission spectroscopy,
M. Piccardo, L. Martinelli, J. Iveland, N. Young, S. P. DenBaars, S. Nakamura, J. S. Speck, C. Weisbuch and J. Peretti,
Physical Review B 89, 235124 (2014)
http://dx.doi.org/10.1103/PhysRevB.89.235124

Piezoresistance in silicon and its nanostructures,
A. C. H. Rowe,
Journal of Materials Research 29, 731 (2014)
http://dx.doi.org/10.1557/jmr.2014.52

Nuclear magnetization in gallium arsenide quantum dots at zero magnetic field,
G. Sallen, S. Kunz, T. Amand, L. Bouet, T. Kuroda, T. Mano, D. Paget, O. Krebs, X. Marie, K. Sakoda and B. Urbaszek,
Nature Communications 5, 3268 (2014)
http://dx.doi.org/10.1038/ncomms4268

2013

Effect of Pauli Blockade on Spin-Dependent Diffusion in a Degenerate Electron Gas,
F. Cadiz, D. Paget and A. C. H. Rowe,
Physical Review Letters 111, 246601 (2013)
http://dx.doi.org/10.1103/PhysRevLett.111.246601

Surface recombination in doped semiconductors : Effect of light excitation power and of surface passivation,
F. Cadiz, D. Paget, A. C. H. Rowe, V. L. Berkovits, V. P. Ulin, S. Arscott and E. Peytavit,
Journal of Applied Physics 114, 103711 (2013)
http://dx.doi.org/10.1063/1.4821139

Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection : Identification of the Dominant Mechanism for Efficiency Droop,
J. Iveland, L. Martinelli, J. Peretti, J. S. Speck and C. Weisbuch,
Physical Review Letters 110, 177406 (2013)
http://dx.doi.org/10.1103/PhysRevLett.110.177406

Optically Anisotropic Thin Films by Shear-Oriented Assembly of Colloidal Nanorods,
J. Kim, J. Peretti, K. Lahlil, J. P. Boilot and T. Gacoin,
Advanced Materials 25, 3295 (2013)
http://dx.doi.org/10.1002/adma.201300594

Real Time Infra-Red Absorption Analysis of Nitridation of GaAs(001) by Hydrazine Solutions,
D. Paget, V. L. Berkovits, V. P. Ulin, F. Ozanam, P. Dumas, S. Kubsky, K. Lahlil, L. Bideux and G. Monier,
Journal of the Electrochemical Society 160, H229 (2013)
http://dx.doi.org/10.1149/2.063304jes