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Accueil > Productions scientifiques > Electrons Photons Surfaces

2014 - 2018

par Anne-Marie - publié le , mis à jour le

2018

Identification of low-energy peaks in electron emission spectroscopy of InGaN/GaN light-emitting diodes,
D. J. Myers, K. Gelžinytė, W. Y. Ho, J. Iveland, L. Martinelli, J. Peretti, C. Weisbuch, and J. S. Speck
Journal of Applied Physics 124, 055703 (2018)
http://dx.doi.org/10.1063/1.5030208

Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy,
W. Hahn, J.-M. Lentali, P. Polovodov, N. Young, S. Nakamura, J. S. Speck, C. Weisbuch, M. Filoche, Y. R. Wu, M. Piccardo, F. Maroun, L. Martinelli, Y. Lassailly, and J. Peretti,
Physical Review B 98, 045305 (2018)
http://dx.doi.org/10.1103/PhysRevB.98.045305

Ultrafast electron dynamics reveal the high potential of InSe for hot-carrier optoelectronics,
Z. Chen, C. Giorgetti, J. Sjakste, R. Cabouat, V. Véniard, Z. Zhang, A. Taleb-Ibrahimi, E. Papalazarou, M. Marsi, A. Shukla, J. Peretti and L. Perfetti,
Physical Review B 97, 241201 (2018)
http://dx.doi.org/10.1103/PhysRevB.97.241201

Exciton diffusion in WSe2 monolayers embedded in a van der Waals heterostructure,
F. Cadiz, C. Robert, E. Courtade, M. Manca, L. Martinelli, T. Taniguchi, K. Watanabe, T. Amand, A. C. H. Rowe, D. Paget, B. Urbaszek and X. Marie,
Applied Physics Letters 112, 152106 (2018)
http://dx.doi.org/10.1063/1.5026478

Laser induced phase transition in epitaxial FeRh layers studied by pump‐probe valence band photoemission,
F. Pressacco, V. Uhlíř, M. Gatti, A. Nicolaou, A. Bendounan, J. A. Arregi, S. K. K. Patel, E. E. Fullerton, D. Krizmancic and S. F. Sirotti,
Structural Dynamics 5, 034501 (2018)
http://dx.doi.org/10.1063/1.5027809

Auger-generated hot carrier current in photo-excited forward biased single quantum well blue light emitting diodes,
A. C. Espenlaub, A. I. Alhassan, S. Nakamura, C. Weisbuch and J. S. Speck,
Applied Physics Letters 112, 141106 (2018)
http://dx.doi.org/10.1063/1.5021475

Prospects for 100% wall-plug efficient III-nitride LEDs,
L. Y. Kuritzky, C. Weisbuch and J. S. Speck,
Optics Express 26, 16600 (2018)
http://dx.doi.org/10.1364/OE.26.016600

Historical perspective on the physics of artificial lighting,
C. Weisbuch,
Comptes Rendus Physique 19, 89 (2018)
http://dx.doi.org/10.1016/j.crhy.2018.03.001

LEDs : The new revolution in lighting Foreword,
C. Weisbuch, E. Spitz and A. David,
Comptes Rendus Physique 19, 85 (2018)
http://dx.doi.org/10.1016/j.crhy.2018.05.001

2017

Correlation between structure, electronic properties, and magnetism in CoxGd1-x thin amorphous films,
N. Bergeard, A. Mougin, M. Izquierdo, E. Fonda and F. Sirotti,
Physical Review B 96, 064418 (2017)
http://dx.doi.org/10.1103/PhysRevB.96.064418

Spin and recombination dynamics of excitons and free electrons in p-type GaAs : Effect of carrier density,
F. Cadiz, D. Lagarde, P. Renucci, D. Paget, T. Amand, H. Carrere, A. C. H. Rowe and S. Arscott,
Applied Physics Letters 110, 082101 (2017)
http://dx.doi.org/10.1063/1.4977003

Ambipolar spin diffusion in p-type GaAs : A case where spin diffuses more than charge,
F. Cadiz, V. Notot, J. Filipovic, D. Paget, C. P. Weber, L. Martinelli, A. C. H. Rowe and S. Arscott,
Journal of Applied Physics 122, 095703 (2017)
http://dx.doi.org/10.1063/1.4985831

Ultrafine tuning of the metal volume fraction in silver/silicate nanocomposites near the percolation threshold,
T. Das Gupta, I. Maurin, A. C. H. Rowe and T. Gacoin,
Nanoscale 9, 3504 (2017)
http://dx.doi.org/10.1039/c6nr08918f

A photoemission spectroscopy study of the initial oxidation of epitaxial fcc and bcc Fe films grown on Cu(100),
R. de Mendonca, M. D. Martins, M. Silly, F. Sirotti and W. A. A. Macedo,
Thin Solid Films 636, 567 (2017)
http://dx.doi.org/10.1016/j.tsf.2017.06.049

Localization landscape theory of disorder in semiconductors. I. Theory and modeling,
M. Filoche, M. Piccardo, Y. R. Wu, C. K. Li, C. Weisbuch and S. Mayboroda,
Physical Review B 95, 144204 (2017)
http://dx.doi.org/10.1103/PhysRevB.95.144204

Localization landscape theory of disorder in semiconductors. II. Urbach tails of disordered quantum well layers,
M. Piccardo, C. K. Li, Y. R. Wu, J. S. Speck, B. Bonef, R. M. Farrell, M. Filoche, L. Martinelli, J. Peretti and C. Weisbuch,
Physical Review B 95, 144205 (2017)
http://dx.doi.org/10.1103/PhysRevB.95.144205

Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes,
C. K. Li, M. Piccardo, L. S. Lu, S. Mayboroda, L. Martinelli, J. Peretti, J. S. Speck, C. Weisbuch, M. Filoche and Y. R. Wu,
Physical Review B 95, 144206 (2017)
http://dx.doi.org/10.1103/PhysRevB.95.144206

Chemical and kinetic insights into the Thermal Decomposition of an Oxide Layer on Si(111) from Millisecond Photoelectron Spectroscopy,
J. J. Gallet, M. G. Silly, M. El Kazzi, F. Bournel, F. Sirotti and F. Rochet,
Scientific Reports 7, 14257 (2017)
http://dx.doi.org/10.1038/s41598-017-14532-4

Surface-enhanced gallium arsenide photonic resonator with quality factor of 6 x 10(6),
B. Guha, F. Marsault, F. Cadiz, L. Morgenroth, V. Ulin, V. Berkovitz, A. Lemaitre, C. Gomez, A. Amo, S. Combrie, B. Gerard, G. Leo and I. Favero,
Optica 4, 218 (2017)
http://dx.doi.org/10.1364/optica.4.000218

Protected surface state in stepped Fe (0181),
M. Izquierdo, P. Torelli, J. Fujii, G. Panaccione, I. Vobornik, G. Rossi and F. Sirotti,
Scientific Reports 7, 6609 (2017)
http://dx.doi.org/10.1038/s41598-017-06896-4

Monitoring the orientation of rare-earth-doped nanorods for flow shear tomography,
J. Kim, S. Michelin, M. Hilbers, L. Martinelli, E. Chaudan, G. Amselem, E. Fradet, J. P. Boilot, A. M. Brouwer, C. N. Baroud, J. Peretti and T. Gacoin,
Nature Nanotechnology 12, 914 (2017)
http://dx.doi.org/10.1038/nnano.2017.111

High wall-plug efficiency blue III-nitride LEDs designed for low current density operation,
L. Y. Kuritzky, A. C. Espenlaub, B. P. Yonkee, C. D. Pynn, S. P. DenBaars, S. Nakamura, C. Weisbuch and J. S. Speck,
Optics Express 25, 30696 (2017)
http://dx.doi.org/10.1364/OE.25.030696

Domain formation mechanism of the Si(110) "16 x 2" reconstruction,
N. K. Lewis, N. B. Clayburn, E. Brunkow, T. J. Gay, Y. Lassailly, J. Fujii, I. Vobornik, W. R. Flavell and E. A. Seddon,
Physical Review B 95, 205306 (2017)
http://dx.doi.org/10.1103/PhysRevB.95.205306

Luminescence imaging of photoelectron spin precession during drift in a p-type GaAs microfabricated Hall bar,
V. Notot, D. Paget, A. C. H. Rowe, L. Martinelli, F. Cadiz and S. Arscott,
Journal of Applied Physics 121, 125703 (2017)
http://dx.doi.org/10.1063/1.4979097

A. C. H. Rowe, I. Zhaksylykova, G. Dilasser, Y. Lassailly and J. Peretti, Polarizers, optical bridges, and Sagnac interferometers for nanoradian polarization rotation measurements, Review of Scientific Instruments 88, 043903 (2017)
http://dx.doi.org/10.1063/1.4980038

Pump-probe experiments at the TEMPO beamline using the low-alpha operation mode of Synchrotron SOLEIL,
M. G. Silly, T. Ferte, M. A. Tordeux, D. Pierucci, N. Beaulieu, C. Chauvet, F. Pressacco, F. Sirotti, H. Popescu, V. Lopez-Flores, M. Tortarolo, M. Sacchi, N. Jaouen, P. Hollander, J. P. Ricaud, N. Bergeard, C. Boeglin, B. Tudu, R. Delaunay, J. Luning, G. Malinowski, M. Hehn, C. Baumier, F. Fortuna, D. Krizmancic, L. Stebel, R. Sergo and G. Cautero,
Journal of Synchrotron Radiation 24, 886 (2017)
http://dx.doi.org/10.1107/s1600577517007913

2016

Optical Patterning of Sol-Gel Silica Coatings,
N. Desboeufs, A. D. Vu, K. Lahlil, Y. Lassailly, L. Martinelli, J. P. Boilot, J. Peretti and T. Gacoin,
Advanced Optical Materials 4, 313 (2016)
http://dx.doi.org/10.1002/adom.201500417

Intervalley energy of GaN conduction band measured by femtosecond pump-probe spectroscopy,
S. Marcinkevicius, T. K. Uzdavinys, H. M. Foronda, D. A. Cohen, C. Weisbuch and J. S. Speck,
Physical Review B 94, 235205 (2016)
http://dx.doi.org/10.1103/PhysRevB.94.235205

Geometric and chemical components of the giant piezoresistance in silicon nanowires,
M. M. McClarty, N. Jegenyes, M. Gaudet, C. Toccafondi, R. Ossikovski, F. Vaurette, S. Arscott, and A. C. H. Rowe,
Applied Physics Letters 109, 023102 (2016)
http://dx.doi.org/10.1063/1.4955403

Diodes émettrices de lumière bleue : le prix Nobel de physique 2014,
C. Weisbuch,
Reflets de la Physique 47-48, 5 (2016)
http://dx.doi.org/10.1051/refdp/20164748054

Germanium doping of GaN by metalorganic chemical vapor deposition for polarization screening applications,
N. G. Young, R. M. Farrell, M. Iza, S. Nakamura, S. P. DenBaars, C. Weisbuch and J. S. Speck,
Journal of Crystal Growth 455, 105 (2016)
http://dx.doi.org/10.1016/j.jcrysgro.2016.09.074

Polarization field screening in thick (0001) InGaN/GaN single quantum well light-emitting diodes,
N. G. Young, R. M. Farrell, S. Oh, M. Cantore, F. Wu, S. Nakamura, S. P. DenBaars, C. Weisbuch, and J. S. Speck,
Applied Physics Letters 108, 061105 (2016)
http://dx.doi.org/10.1063/1.4941815

2015

Effect of the Pauli principle on photoelectron spin transport in p(+) GaAs,
F. Cadiz, D. Paget, A. C. H. Rowe, T. Amand, P. Barate and S. Arscott,
Physical Review B 91, 165203 (2015)
http://dx.doi.org/10.1103/PhysRevB.91.165203

Ambipolar spin-spin coupling in p(+)-GaAs,
F. Cadiz, D. Paget, A. C. H. Rowe and S. Arscott,
Physical Review B 92, 121203 (2015)
http://dx.doi.org/10.1103/PhysRevB.92.121203

Absence of carrier separation in ambipolar charge and spin drift in p(+)-GaAs,
F. Cadiz, D. Paget, A. C. H. Rowe, L. Martinelli and S. Arscott,
Applied Physics Letters 107, 162101 (2015)
http://dx.doi.org/10.1063/1.4933189

Central role of electronic temperature for photoelectron charge and spin mobilities in p(+)-GaAs,
F. Cadiz, D. Paget, A. C. H. Rowe, E. Peytavit and S. Arscott,
Applied Physics Letters 106, 092108 (2015)
http://dx.doi.org/10.1063/1.4914357

Electroluminescence characteristics of blue InGaN quantum wells on m-plane GaN "double miscut" substrates,
L. Y. Kuritzky, D. J. Myers, J. Nedy, K. M. Kelchner, S. Nakamura, S. P. DenBaars, C. Weisbuch and J. S. Speck,
Applied Physics Express 8, 061002 (2015)
http://dx.doi.org/10.7567/apex.8.061002

Low damage dry etch for III-nitride light emitters,
J. G. Nedy, N. G. Young, K. M. Kelchner, Y. L. Hu, R. M. Farrell, S. Nakamura, S. P. DenBaars, C. Weisbuch and J. S. Speck,
Semiconductor Science and Technology 30, 085019 (2015)
http://dx.doi.org/10.1088/0268-1242/30/8/085019

Low-energy electro- and photo-emission spectroscopy of GaN materials and devices,
M. Piccardo, J. Iveland, L. Martinelli, S. Nakamura, J. W. Choi, J. S. Speck, C. Weisbuch and J. Peretti,
Journal of Applied Physics 117, 112814 (2015)
http://dx.doi.org/10.1063/1.4913928

A closer look at the light-induced changes in the mechanical properties of azobenzene-containing polymers by statistical nanoindentation,
L. Sorelli, F. Fabbri, J. Frech-Baronet, A. D. Vu, M. Fafard, T. Gacoin, K. Lahlil, L. Martinelli, Y. Lassailly and J. Peretti,
Journal of Materials Chemistry C 3, 11055 (2015)
http://dx.doi.org/10.1039/c5tc01917f

The efficiency challenge of nitride light-emitting diodes for lighting,
C. Weisbuch, M. Piccardo, L. Martinelli, J. Iveland, J. Peretti and J. S. Speck,
Physica Status Solidi a-Applications and Materials Science 212, 899 (2015)
http://dx.doi.org/10.1002/pssa.201431868

2014

Vapor liquid solid-hydride vapor phase epitaxy (VLS-HVPE) growth of ultra-long defect-free GaAs nanowires : Ab initio simulations supporting center nucleation,
Y. Andre, K. Lekhal, P. Hoggan, G. Avit, F. Cadiz, A. Rowe, D. Paget, E. Petit, C. Leroux, A. Trassoudaine, M. R. Ramdani, G. Monier, D. Colas, R. Ajib, D. Castelluci and E. Gil,
Journal of Chemical Physics 140, 194706 (2014) ;
http://dx.doi.org/10.1063/1.4874875

All optical method for investigation of spin and charge transport in semiconductors : Combination of spatially and time-resolved luminescence,
F. Cadiz, P. Barate, D. Paget, D. Grebenkov, J. P. Korb, A. C. H. Rowe, T. Amand, S. Arscott and E. Peytavit,
Journal of Applied Physics 116, 023711 (2014)
http://dx.doi.org/10.1063/1.4889799

RGE effects on neutrino masses in partial split supersymmetry,
F. Cadiz and M. A. Diaz,
International Journal of Modern Physics A 29, 1450158 (2014)
http://dx.doi.org/10.1142/s0217751x14501589

Piezoresistive Properties of Ag/Silica Nano-Composite Thin Films Close to the Percolation Threshold,
T. Das Gupta, T. Gacoin and A. C. H. Rowe,
Advanced Functional Materials 24, 4522 (2014)
http://dx.doi.org/10.1002/adfm.201303775

Extraction Length Determination in Patterned Luminescent Sol-Gel Films,
L. Devys, G. Dantelle, A. Revaux, V. Kubytskyi, D. Paget, H. Benisty and T. Gacoin,
Advanced Optical Materials 2, 81 (2014)
http://dx.doi.org/10.1002/adom.201300304

Origin of electrons emitted into vacuum from InGaN light emitting diodes,
J. Iveland, M. Piccardo, L. Martinelli, J. Peretti, J. W. Choi, N. Young, S. Nakamura, J. S. Speck and C. Weisbuch,
Applied Physics Letters 105, 052103 (2014)
http://dx.doi.org/10.1063/1.4892473

Optimized combination of intrinsic and form birefringence in oriented LaPO4 nanorod assemblies,
J. Kim, L. Martinelli, K. Lahlil, J. P. Boilot, T. Gacoin and J. Peretti,
Applied Physics Letters 105, 061102 (2014)
http://dx.doi.org/10.1063/1.4892524

Optical detection of spin-filter effect for electron spin polarimetry,
X. Li, O. E. Tereshchenko, S. Majee, G. Lampel, Y. Lassailly, D. Paget and J. Peretti,
Applied Physics Letters 105, 052402 (2014)
http://dx.doi.org/10.1063/1.4892073

Determination of the first satellite valley energy in the conduction band of wurtzite GaN by near-band-gap photoemission spectroscopy,
M. Piccardo, L. Martinelli, J. Iveland, N. Young, S. P. DenBaars, S. Nakamura, J. S. Speck, C. Weisbuch and J. Peretti,
Physical Review B 89, 235124 (2014)
http://dx.doi.org/10.1103/PhysRevB.89.235124

Piezoresistance in silicon and its nanostructures,
A. C. H. Rowe,
Journal of Materials Research 29, 731 (2014)
http://dx.doi.org/10.1557/jmr.2014.52

Nuclear magnetization in gallium arsenide quantum dots at zero magnetic field,
G. Sallen, S. Kunz, T. Amand, L. Bouet, T. Kuroda, T. Mano, D. Paget, O. Krebs, X. Marie, K. Sakoda and B. Urbaszek,
Nature Communications 5, 3268 (2014)
http://dx.doi.org/10.1038/ncomms4268

2013

Effect of Pauli Blockade on Spin-Dependent Diffusion in a Degenerate Electron Gas,
F. Cadiz, D. Paget and A. C. H. Rowe,
Physical Review Letters 111, 246601 (2013)
http://dx.doi.org/10.1103/PhysRevLett.111.246601

Surface recombination in doped semiconductors : Effect of light excitation power and of surface passivation,
F. Cadiz, D. Paget, A. C. H. Rowe, V. L. Berkovits, V. P. Ulin, S. Arscott and E. Peytavit,
Journal of Applied Physics 114, 103711 (2013)
http://dx.doi.org/10.1063/1.4821139

Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection : Identification of the Dominant Mechanism for Efficiency Droop,
J. Iveland, L. Martinelli, J. Peretti, J. S. Speck and C. Weisbuch,
Physical Review Letters 110, 177406 (2013)
http://dx.doi.org/10.1103/PhysRevLett.110.177406

Optically Anisotropic Thin Films by Shear-Oriented Assembly of Colloidal Nanorods,
J. Kim, J. Peretti, K. Lahlil, J. P. Boilot and T. Gacoin,
Advanced Materials 25, 3295 (2013)
http://dx.doi.org/10.1002/adma.201300594

Real Time Infra-Red Absorption Analysis of Nitridation of GaAs(001) by Hydrazine Solutions,
D. Paget, V. L. Berkovits, V. P. Ulin, F. Ozanam, P. Dumas, S. Kubsky, K. Lahlil, L. Bideux and G. Monier,
Journal of the Electrochemical Society 160, H229 (2013)
http://dx.doi.org/10.1149/2.063304jes