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Anderson localization by the alloy disorder in nitride semiconductor devices : the ELENID project funded by the ANR.

par Anne-Marie - publié le

Semiconductor devices incorporate alloys that exhibit intrinsic compositional disorder. In nitride-based compounds, because of the large variation of the band gap energy with the composition, the alloy disorder induces strong spatial variations in the potential seen by the carriers. These fluctuations are at the origin of Anderson localization phenomena which should manifest strongly at room temperature in the transport and recombination properties of the material. In the ELENID project, we propose to study the effects of quantum disorder on the electronic processes in InGaN/GaN and AlGaN/Gan structures by specific spectroscopy and microscopy approaches. In particular, we will make use of an experiment that we have recently developed in the laboratory for performing luminescence micro-spectroscopy measurements under local tunnelling injection of carriers (Figure below). This project will be conducted in collaboration with the LASPE of the Ecole Polytechnique Fédérale de Lausanne (EPFL). It will be supported by the Agence National de la Recherche (ANR) and the Fonds National Suisse (FNS) in the framework of the France-Swiss joint call for international collaborative research project (PRCI).