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The electric field-induced modifications of the spatial distribution of photoelectrons, photoholes, and electronic spins in optically pumped p + GaAs are investigated using a polarized luminescence imaging microscopy. At low pump intensity, application of an electric field reveals the tail of charge and spin density of drifting electrons. These tails disappear when the pump intensity is increased since a slight differential drift of photoelectrons and photoholes causes the buildup of a strong internal electric field. Spatial separation of photoholes and photoelectrons is very weak so that photoholes drift in the same direction as photoelectrons, thus exhibiting a negative effective mobility. In contrast, for a zero electric field, no significant ambipolar diffusive effects are found in the same sample.
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31 January 2019
Mechanical stress is widely used in strained-silicon technologies to improve the performance of microelectronic devices. This relies on the fact that stress can be used to modify the so-called (...)
19 December 2018
The roadmap of future innovative device developments foresees the reduction of material dimensions down to nanometer scale and the incorporation of 2D compounds with novel degrees of freedom (...)
22 November 2018
Wiebke Hahn, PhD student in the Electrons-Photons-Surfaces group, wins the student award for her oral presentation at the 10th International Workshop on Nitride Semiconductors 2018 in Kanazawa, (...)
19 November 2018
Jeongmo KIM, PhD student at the chemistry group of PMC Laboratory received the "poster prize" from the Innovative Materials and Applications pole at the day of the Interfaces doctoral school on (...)
8 November 2018
Connect to the SIMONS project web site to understand the “localization landscape” enabling the solution of some of the most compelling puzzles in modern condensed matter physics and gaining (...)
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