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The electric field-induced modifications of the spatial distribution of photoelectrons, photoholes, and electronic spins in optically pumped p + GaAs are investigated using a polarized luminescence imaging microscopy. At low pump intensity, application of an electric field reveals the tail of charge and spin density of drifting electrons. These tails disappear when the pump intensity is increased since a slight differential drift of photoelectrons and photoholes causes the buildup of a strong internal electric field. Spatial separation of photoholes and photoelectrons is very weak so that photoholes drift in the same direction as photoelectrons, thus exhibiting a negative effective mobility. In contrast, for a zero electric field, no significant ambipolar diffusive effects are found in the same sample.
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22 November 2018

Wiebke Hahn winner of the student award for her talk at IWN 2018

Wiebke Hahn, PhD student in the Electrons-Photons-Surfaces group, wins the student award for her oral presentation at the 10th International Workshop on Nitride Semiconductors 2018 in Kanazawa, (...)

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19 November 2018

"poster prize" from the Innovative Materials and Applications pole

Jeongmo KIM, PhD student at the chemistry group of PMC Laboratory received the "poster prize" from the Innovative Materials and Applications pole at the day of the Interfaces doctoral school on (...)

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8 November 2018

launch of the Simons project website

Connect to the SIMONS project web site to understand the “localization landscape” enabling the solution of some of the most compelling puzzles in modern condensed matter physics and gaining control (...)

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10 October 2018

Modeling of crystal growth with the help of phase-field methods

We currently deepen our collaboration with the team of Laszlo Granasy and Tamas Pusztai at the Wigner Research Institute in Budapest, Hungary. This collaboration is supported by CNRS through an (...)

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26 September 2018

Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells

InGaN/GaN quantum wells (QWs), the active regions of nitride-based LEDs, display broad photo- or electro-luminescence spectra. The emission is assumed to be inhomogeneously broadened due to the (...)

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