Wiebke Hahn, PhD student in the Electrons-Photons-Surfaces group, wins the student award for her oral presentation at the 10th International Workshop on Nitride Semiconductors 2018 in Kanazawa, Japan (http://www.iwn2018.jp/). Only the top 5% student contributions were awarded at this workshop. The presentation was entitled : “Properties and consequences of carrier localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells”. It focuses on the experimental study of disorder induced localization in InGaN/GaN QW structures by scanning tunneling luminescence spectroscopy. The theoretical counter part of it is provided by the Localization Landscape Theory which was developed by the Physics of Irregular Systems group. The collaboration between the two groups of the laboratory is part of a project which also involves the National Taiwan University and the University of California at Santa Barbara.
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