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Two projects involving the use of mechanical stress to probe the electronic properties of semiconductors financed by the ANR

par Anne-Marie - publié le , mis à jour le

Mechanical stress can modify the electronic structure of solids along with the charge carrier dynamics. Although not widely used, externally applied stress can therefore be used to reveal the electronic and optical properties of materials. One of the two projects to be financed (for which the laboratory is the coordinating partner, ANR-17-CE24-0005, TRAMP) concerns the study of the effect of stress on the electrical transport properties of silicon nano-objects in the so-called space charge limited current regime. In the second project (ANR-17-CE09-0036, NEMS-GAN) the high temperature piezoresistive and piezoelectric properties of the semiconductor GaN is to be studied.